MRFE6VP5300NR1, MRFE6VP5300GNR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - ...

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04/25 00:00
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MRFE6VP5300N and MRFE6VP5300GN are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio

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