MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

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04/25 00:00
阅读数 16

RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. Thes devices are suitable for use in pulsed applications.

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