MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

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04/25 00:00
阅读数 22

RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

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